产品线卡
Nexperia总部位于荷兰，是一家在欧洲拥有丰富悠久发展历史的全球性半导体公司，目前在欧洲、亚洲和美国共有14,000多名员工。作为基础半导体器件开发和生产的领跑者，Nexperia的器件被广泛应用于汽车、工业、移动和消费等多个应用领域，几乎为世界上所有电子设计的基本功能提供支持。
Nexperia为全球客户提供服务，每年的产品出货量超过1,000亿件。这些产品在效率（如工艺、尺寸、功率及性能）方面成为行业基准，获得广泛认可。Nexperia拥有丰富的IP产品组合和持续扩充的产品范围，并获得了IATF 16949、ISO 9001、ISO 14001和ISO 45001标准认证，充分体现了公司对于创新、高效和满足行业严苛要求的坚定承诺。
NGW50T65M3DFP
650 V, 50 A trench field-stop IGBT with full rated silicon diode
The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
650 V, 50 A trench field-stop IGBT with full rated silicon diode
The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW50T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
NGW50T65H3DFP
650 V, 50 A trench field-stop IGBT with full rated silicon diode
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
650 V, 50 A trench field-stop IGBT with full rated silicon diode
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses,. This hard-switching 650 V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
NGW40T65M3DFP
650 V, 40 A trench field-stop IGBT with full rated silicon diode
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-?circuit withstand time of 5 μs. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-?circuit withstand time of 5 μs. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
650 V, 40 A trench field-stop IGBT with full rated silicon diode
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-?circuit withstand time of 5 μs. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-?circuit withstand time of 5 μs. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications and servo motor drive applications.
NGW40T65H3DHP
650 V, 40 A trench field-stop IGBT with half rated silicon diode
The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
650 V, 40 A trench field-stop IGBT with half rated silicon diode
The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
The NGW40T65H3DHP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third??-??generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65H3DHP is rated to 175 °C with optimized IGBT turn-off losses. This hard?-?switching 650 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications.
NSF080120L4A0
1200 V, 80 mOhm, N-channel SiC MOSFET
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 mOhm, N-channel SiC MOSFET
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF080120L3A0
1200 V, 80 mΩ, N-channel SiC MOSFET
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 mΩ, N-channel SiC MOSFET
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF080120D7A0
1200 V, 80 m?, N-channel SiC MOSFET
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 m?, N-channel SiC MOSFET
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120L4A0
1200 V, 60 mOhm, N-channel SiC MOSFET
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 60 mOhm, N-channel SiC MOSFET
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
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